(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP
2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer
Growth of 1-μm-thick Si-doped GaN films was performed by PSD with pulsed magnetron sputtering sources in an N2/Ar atmosphere. The Si doping concentration in GaN was controlled from 2 × 1016 to 2 × 1020 cm−3 by varying Si vapor flux from a solid state single crystalline Si source.
In study, we investigated how the electrical properties of GaN prepared by PSD depend on the Si doping concentrations using temperature-dependent Hall-effect measurements.
| 2-inch Free-standing N-GaN Substrates |
| | Production level(P) | Research(R) | Dummy(D) | 
Note: (1) 5 points: the miscut angles of 5 positions are 0.55 ±0.15o (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.55 ±0.15o (3) Useable area: exclusion of periphery and macro defects (holes) |
| P+ | P | P- |
| Item | GaN-FS-C-N-C50-SSP |
| Dimensions | 50.0 ±0.3 mm |
| Thickness | 400 ± 30 μm |
| Orientation flat | (1- 100) ±0.1o, 12.5 ± 1 mm |
| TTV | ≤ 15 μm |
| BOW | ≤ 20 μm |
| Resistivity (300K) | ≤ 0.02 Ω·cm for N-type (Si-doped) |
| Ga face surface roughness | ≤ 0.3 nm (polished and surface treatment for epitaxy) |
| N face surface roughness | 0.5 ~1.5 μm (single side polished) |
| C plane (0001) off angle toward M-axis(miscut angles) | 0.55 ± 0.1o (5 points) | 0.55± 0.15o (5 points) | 0.55 ± 0.15o (3 points) |
| Threading dislocation density | ≤ 7.5 x 105 cm-2 | ≤ 3 x 106 cm-2 |
| Number and max size of holes in Ф47 mm in the center | 0 | ≤ 3@1000 μm | ≤ 12@1500 μm | ≤ 20@3000 μm |
| Useable area | > 90% | >80% | >70% |
| Package | Packaged in a cleanroom in single wafer container |
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We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
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We are factory.
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Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
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Yes, we could offer the sample for free charge but do not pay the cost of freight.
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Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
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12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped Images
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